Скачать даташит для 2sa1214:

isc Silicon PNP Power Transistor 2SA1214DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -50V (Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -50 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -2 ACCollector Power Dissipation1.5@ T =25aP WCTotal Power Dissipation25@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor 2SA1214ELECTRICAL CHARACTERISTICST =25 unless o