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isc Silicon PNP Power Transistor 2SB563 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = -1.0V(Max) @I = -3A CE(sat) C Complement to Type 2SD297 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -80 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -3.0 A C Collector Power Dissipation P 25 W C @ T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB563 ELECTRICAL CHARACTERISTICS T =25