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isc Silicon PNP Power Transistor 2SB563DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = -1.0V(Max) @I = -3ACE(sat) CComplement to Type 2SD297Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -80 VCBOV Collector-Emitter Voltage -80 VCEOV Emitter-Base Voltage -5 VEBOI Collector Current-Continuous -3.0 ACCollector Power DissipationP 25 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon PNP Power Transistor 2SB563ELECTRICAL CHARACTERISTICST =25