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INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB567 DESCRIPTION Collector-Emitter BreakdownVoltage- V = -150V(Min.) (BR)CEO Low Collector Saturation Voltage- V = -2.0(Max.) @I = -0.5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -200 V CBO V Collector-Emitter Voltage -150 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current-Continuous -2 A C I Collector Current-Peak -5 A CM Collector Power Dissipation@T =25 30 C P W C Collector Power Dissipation@T =25 1.8 a T Junction Temperature 150 J T Storage Temperature -45 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semi