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INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB567DESCRIPTIONCollector-Emitter BreakdownVoltage-: V = -150V(Min.)(BR)CEOLow Collector Saturation Voltage-: V = -2.0(Max.) @I = -0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -200 VCBOV Collector-Emitter Voltage -150 VCEOV Emitter-Base Voltage -6 VEBOI Collector Current-Continuous -2 ACI Collector Current-Peak -5 ACMCollector Power Dissipation@T =25 30CP WCCollector Power Dissipation@T =25 1.8aT Junction Temperature 150 JT Storage Temperature -45~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semi