Скачать даташит для 2sc3412:

isc Silicon NPN Power Transistor 2SC3412 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 500V (Min) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage 1300 V CBO V Collector-Emitter Voltage 500 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 8 A C I Collector Current-Peak 10 A CM Collector Power Dissipation P 50 W C @T =25 C T Junction Temperature 150 j T Storage Temperature Range -45 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3412 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARAMETER