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isc Silicon NPN Power Transistor 2SC3412DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 500V (Min)(BR)CEOHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage 1300 VCBOV Collector-Emitter Voltage 500 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 8 ACI Collector Current-Peak 10 ACMCollector Power DissipationP 50 WC@T =25CT Junction Temperature 150 jT Storage Temperature Range -45~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SC3412ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCSYMBOL PARAMETER