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INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1300 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1500V (Min.) (BR)CBO Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 600 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 3.0 A C I Emitter Current-Continuous 3.0 A E Collector Power Dissipation P 50 W C @T =25 C T Junction Temperature 150 j T Storage Temperature Range -65 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD130