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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1300DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1500V (Min.)(BR)CBOLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 600 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 3.0 ACI Emitter Current-Continuous 3.0 AECollector Power DissipationP 50 WC@T =25CT Junction Temperature 150 jT Storage Temperature Range -65~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD130