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isc Silicon NPN Power Transistor 2SD669A DESCRIPTION High Collector Current-I = 1.5A C High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD649 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 180 V CBO V Collector-Emitter Voltage 160 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 1.5 A C I Collector Current-Pulse 3 A CP Collector Power Dissipation 20 @ T =25 C P W C Collector Power Dissipation 1 @ T =25 a T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silico