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isc Silicon NPN Power Transistor 2SD669ADESCRIPTIONHigh Collector Current-I = 1.5ACHigh Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD649Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(TC=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 180 VCBOV Collector-Emitter Voltage 160 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 1.5 ACI Collector Current-Pulse 3 ACPCollector Power Dissipation20@ T =25CP WCCollector Power Dissipation1@ T =25aT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silico