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isc N-Channel MOSFET Transistor 2SK3271 FEATURES With TO-3P packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V DSS V Gate-Source Voltage 30 V GSS I Drain Current-Continuous 100 A D I Drain Current-Single Pulsed 400 A DM P Total Dissipation 155 W D T Operating Junction Temperature -55 150 j Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.81 isc N-Channel MOSFET Transistor 2SK3271 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARAMETER CONDIT