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isc N-Channel MOSFET Transistor 2SK694 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed.high Current switching applications. DC converter and motor drive applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS V Gate-Source Voltage 20 V GS I Drain Current-continuous@ TC=25 12 A D P Total Dissipation@TC=25 150 W tot T Max. Operating Junction Temperature 150 j T Storage Temperature Range -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance,Junction to Case 0.83 th j-c /W R Thermal Resistance,Junction to Ambient 30 th j-a 1 isc we