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isc N-Channel MOSFET Transistor 2SK818 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE NIT V Drain-Source Voltage (V =0) 800 V DSS GS V Gate-Source Voltage 20 V GS I Drain Current-continuous@ TC=25 5 A D P Total Dissipation@TC=25 100 W tot T Max. Operating Junction Temperature 150 j T Storage Temperature Range -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance,Junction to Case 1.0 th j-c /W R Thermal Resistance,Junction to Ambient 62.5