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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 3DF20E DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 350 V CBO V Collector-Emitter Voltage 250 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 20 A C P Total Power Dissipation@T =75 200 W D C T Max.Junction Temperature 175 J T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT R Thermal Resistance,Junction to Case 0.5 /W th j-c 1 isc website www.iscsemi.com isc & iscsemi is registe