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isc Silicon NPN Transistor BC337 DESCRIPTION Low Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For AF-Driver stages and low power output stages. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 45 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 800 mA C Collector Power Dissipation P 625 mW C @T =25 C T Junction Temperature 150 J T Storage Temperature Range -55 150 stg 1 isc website www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Transistor BC337 ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified C SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V Collector-Base Breakdown Voltage I =100 A; I = 0 50 V (BR)CBO C E V Collector-Emitter Breakdown Vol