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INCHANGE Semiconductor isc Silicon PNP Power Transistor BD140 DESCRIPTION DC Current Gain- h = 63(Min)@ I = -0.15A FE C Collector-Emitter Sustaining Voltage - V = -80V(Min) CEO(SUS) Complement to type BD139 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -100 V CBO V Collector-Emitter Voltage -80 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current-Continuous -1.5 A C I Base Current-Continuous -0.5 A B Collector Power Dissipation 1.25 @ T =25 a P W C Collector Power Dissipation 12.5 @ T =25 C T Junction Temperature 150 J Storage Temperature Range -55 150 T stg THERMAL CH