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Isc N-Channel MOSFET Transistor IRF1310NL FEATURES With To-262 package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage 20 V GSS Drain Current-ContinuousTc=25 42 I A D 30 Tc=100 I Drain Current-Single Pulsed 140 A DM P Total Dissipation @T =25 160 W D C T Max. Operating Junction Temperature 175 ch T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.95 1 isc website www.iscsemi.cn isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor IRF1