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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1503 IIRF1503 FEATURES Static drain-source on-resistance RDS(on) 3.3m Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=250 A) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 75 A D I Drain Current-Single Pulsed 960 A DM P Total Dissipation @T =25 200 W D C T Max. Operating Junction Temperature 175 j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 0.75 Channel-to-ambi