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isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807Z FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous Rectifier applications Resonant mode power supplies Battery powered circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 75 A D I Drain Current-Single Pulsed 350 A DM P Total Dissipation @T =25 170 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -55 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W Rth(ch-c) Channel-to-case thermal resistance 0.88 /W Rth(ch-a) Channel-to-ambient thermal res

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 irf2807z.pdf Проектирование, MOSFET, Мощность

 irf2807z.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irf2807z.pdf База данных, Инновации, ИМС, Транзисторы