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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF3710Z IIRF3710Z FEATURES Static drain-source on-resistance RDS(on) 18m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate-Source Voltage 20 V GS I Drain Current-Continuous 59 A D I Drain Current-Single Pulsed 240 A DM P Total Dissipation @T =25 160 W D C T Max. Operating Junction Temperature 175 j Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 0.92 Channel-to-ambient thermal resistance /W Rth(ch-a) 6

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 irf3710z.pdf Проектирование, MOSFET, Мощность

 irf3710z.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irf3710z.pdf База данных, Инновации, ИМС, Транзисторы