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irf3710zirf3710z

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF3710ZIIRF3710ZFEATURESStatic drain-source on-resistance:RDS(on) 18mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 59 ADI Drain Current-Single Pulsed 240 ADMP Total Dissipation @T =25 160 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.92Channel-to-ambient thermal resistance/WRth(ch-a) 6

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 irf3710z.pdf Проектирование, MOSFET, Мощность

 irf3710z.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irf3710z.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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