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isc N-Channel MOSFET Transistor IRFB4228 IIRFB4228 FEATURES Static drain-source on-resistance RDS(on) 15m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and high repetitive peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V DSS V Gate-Source Voltage 30 V GS I Drain Current-Continuous 83 A D I Drain Current-Single Pulsed 330 A DM P Total Dissipation @T =25 330 W D C T Max. Operating Junction Temperature 175 j T Storage Temperature -40 175 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(ch-c) 0.45 Channel-to-ambient thermal resistance /W Rth(ch-a) 6