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isc N-Channel MOSFET Transistor IRFP3207Z FEATURES Drain Current I = 170A@ T =25 D C Drain Source Voltage- V = 75V(Min) DSS Static Drain-Source On-Resistance R = 4.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High Speed Power Switching Hard Switched and High Frequency Circuits ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V DSS V Gate-Source Voltage-Continuous 20 V GS I Drain Current-Continuous 170 A D I Drain Current-Single Pluse 670 A DM P Total Dissipation @T =25 300 W D C T Max. Operating Junction Temperature -55 175 J Storage Temperature -55 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance, Junction to Case 0.5 th j-c 1 isc website w