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isc N-Channel MOSFET Transistor IRFP3207ZFEATURESDrain Current I = 170A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 4.1m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh Speed Power SwitchingHard Switched and High Frequency CircuitsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 75 VDSSV Gate-Source Voltage-Continuous 20 VGSI Drain Current-Continuous 170 ADI Drain Current-Single Pluse 670 ADMP Total Dissipation @T =25 300 WD CT Max. Operating Junction Temperature -55~175 JStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WR Thermal Resistance, Junction to Case 0.5th j-c1isc websitew