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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP351(R) FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 350 V DSS V Gate-Source Voltage-Continuous 20 V GS I Drain Current-Continuous 15 A D I Drain Current-Single Pluse 60 A DM P Total Dissipation @T =25 150 W D C Max. Operating Junction Temperature -55 150 T J T Storage Temperature -55 150 stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance, Junction to Case 0.83 th j-c /W R Thermal Resistance, Junction to Ambient 80