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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4332 IIRFP4332 FEATURES Static drain-source on-resistance RDS(on) 33m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Repetitive Peak Current Capability for Reliable Operation Short fall & Rise Times For Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 250 V DSS V Gate-Source Voltage 30 V GS I Drain Current-Continuous 57 A D I Drain Current-Single Pulsed 230 A DM P Total Dissipation @T =25 360 W D C T Max. Operating Junction Temperature 175 j Storage Temperature -40 175 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Channel-to-case thermal resistance /W Rth(j-c) 0.42 Channel-to-ambient thermal resi