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INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4332IIRFP4332FEATURESStatic drain-source on-resistance:RDS(on)33mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Repetitive Peak Current Capability for Reliable OperationShort fall & Rise Times For Fast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 250 VDSSV Gate-Source Voltage 30 VGSI Drain Current-Continuous 57 ADI Drain Current-Single Pulsed 230 ADMP Total Dissipation @T =25 360 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -40~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(j-c) 0.42Channel-to-ambient thermal resi