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isc N-Channel MOSFET Transistor R6535KNZ FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 115m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS V Gate-Source Voltage-Continuous 20 V GS I Drain Current-Continuous 35 A D I Drain Current-Single Pluse 105 A DM P Total Dissipation @T =25 102 W D C T Max. Operating Junction Temperature 150 J Storage Temperature -55 150 T stg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT /W R Thermal Resistance, Junction to Case 1.25 th j-c 1 isc websit