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isc Silicon NPN Darlington Power Transistor TIP122FP DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 3A FE C Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 3A CE(sat) C = 4.0V(Max)@ I = 5A C Complement to Type TIP127FP Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 100 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current-Continuous 5 A C I Collector Current-Peak 8 A CM I Base Current 100 mA B Collector Power Dissipation 29 T =25 C P W C Collector Power Dissipation 2 T =25 a T Junction