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PD - 96384A AUTOMOTIVE GRADE AUIRF2807 HEXFET Power MOSFET Features V(BR)DSS 75V l Advanced Planar Technology D l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 13m l 175 C Operating Temperature l Fast Switching G ID(Silicon Limited) 82A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 75A l Lead-Free, RoHS Compliant l Automotive Qualified * D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs S utilizes the latest processing techniques to achieve low D G on-resistance per silicon area. This benefit combined with TO-220AB the fast switching speed and ruggedized device design AUIRF2807 that HEXFET power MOSFETs are well known for, pro- vides the designer with an extremely efficient and reliable device for use in Automotive and a wide v

Ключевые слова - ALL TRANSISTORS DATASHEET

  Проектирование, MOSFET, Мощность

  Соответствует RoHS, Сервис, Симисторы, Полупроводник

  База данных, Инновации, ИМС, Транзисторы