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PD - 96384AAUTOMOTIVE GRADEAUIRF2807HEXFET Power MOSFETFeaturesV(BR)DSS75Vl Advanced Planar Technology Dl Low On-Resistancel Dynamic dV/dT RatingRDS(on) max.13ml 175C Operating Temperaturel Fast SwitchingGID(Silicon Limited) 82Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up to TjmaxSID (Package Limited) 75Al Lead-Free, RoHS Compliantl Automotive Qualified *DDescriptionSpecifically designed for Automotive applications, thisStripe Planar design of HEXFET Power MOSFETsSutilizes the latest processing techniques to achieve lowDGon-resistance per silicon area. This benefit combined withTO-220ABthe fast switching speed and ruggedized device designAUIRF2807that HEXFET power MOSFETs are well known for, pro-vides the designer with an extremely efficient and reliabledevice for use in Automotive and a wide v

 

Ключевые слова - ALL TRANSISTORS DATASHEET

  Проектирование, MOSFET, Мощность

  Соответствует RoHS, Сервис, Симисторы, Полупроводник

  База данных, Инновации, ИМС, Транзисторы

 

 
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