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BFP842ESD SiGe C NPN RF bipolar transistor Product description The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications. Feature list Unique combination of high end RF performance and robustness 16 dBm maximum RF input power, 1 kV HBM ESD hardness High transition frequency fT = 57 GHz to enable best in class noise performance at high frequencies NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA High gain Gma = 17.5 dB at 3.5 GHz, 2.5 V, 15 mA OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require corresponding collector resistor) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Wireless communi