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BFP842ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.Feature list Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power,1 kV HBM ESD hardness High transition frequency fT = 57 GHz to enable best in class noise performance at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA High gain Gma = 17.5 dB at 3.5 GHz, 2.5 V, 15 mA OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require correspondingcollector resistor)Product validationQualified for industrial applications according to the relevant tests of JEDEC47/20/22.Potential applications Wireless communi