Скачать даташит для bfp843f:

BFP843F SiGe C NPN RF bipolar transistor Product description The BFP843F is a robust low noise broadband pre-matched RF heterojunction bipolar transistor (HBT). Feature list Unique combination of high end RF performance and robustness 20 dBm maximum RF input power, 1.5 kV HBM ESD hardness High transition frequency to enable best in class noise performance at high frequencies NFmin = 1.1 dB at 5.5 GHz, 1.8 V, 8 mA High gain Gma = 18 dB at 5.5 GHz, 1.8 V, 15 mA OIP3 = 19.5 dBm at 5.5 GHz, 1.8 V, 15 mA Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications WLAN, WiMAX and UWB Satellite communication systems satellite radio (SDARs, DAB) a