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IPB107N20NA IPP110N20NA OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V N-channel, normal level RDS(on),max (TO263) 10.7 mW Excellent gate charge x R product (FOM) DS(on) ID 88 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and synchronous rectification Type IPB107N20NA IPP110N20NA Package PG-TO263-3 PG-TO220-3 Marking 107N20NA 110N20NA Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25 C Continuous drain current 88 A D C T =100 C 63 C I T =25 C 352 Pulsed drain current1) D,pulse C E Avalanche energy, single pulse I =80 A, R =25 W 560 mJ AS D GS Reverse diode dv /dt dv /dt 10 kV/ s