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IPB107N20NA IPP110N20NAOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and synchronous rectificationType IPB107N20NA IPP110N20NAPackage PG-TO263-3 PG-TO220-3Marking 107N20NA 110N20NAMaximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI T =25 CContinuous drain current 88 AD CT =100 C63CI T =25 C352Pulsed drain current1) D,pulse CEAvalanche energy, single pulse I =80 A, R =25 W 560 mJAS D GSReverse diode dv /dt dv /dt 10 kV/s