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PD - 96040C IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l 175 C Operating Temperature V(BR)DSS 40V D l Fast Switching RDS(on) typ. 2.7m l Repetitive Avalanche Allowed up to Tjmax max. 3.7m l Lead-Free G ID (Silicon Limited) 180A Description ID (Package Limited) 120A S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device TO-220AB D2Pak TO-262 for use in a wide variety of applications. IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Absolute Maximum Ratings Parameter Max. Unit