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PD - 97035D IRFB4227PbF Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 19.7 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 130 A and Pass Switch Applications TJ max 175 C l Low QG for Fast Response l High Repetitive Peak Current Capability for D Reliable Operation D l Short Fall & Rise Times for Fast Switching l175 C Operating Junction Temperature for Improved Ruggedness G S l Repetitive Avalanche Capability for Robustness D and Reliability G S l Class-D Audio Amplifier 300W-500W TO-220AB (Half-bridge) GDS Gate Drain Source Description This HEXFET Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch a