PDF недоступен!

PD - 95481 SMPS MOSFET IRFP3703PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Synchronous Rectification 30V 0.0028 210A l Active ORing l Lead-Free Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated TO-247AC Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 210 ID @ TC = 100 C Continuous Drain Current, VGS @ 10V 100 A IDM Pulsed Drain Current 1000 PD @TC = 25 C Power Dissipation 230 W PD @TA = 25 C Power Dissipation 3.8 Linear Derating Factor 1.5 W/ C VGS Gate-to-Source Voltage 20 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 175 C Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case 0.65 R CS Case-to-Sink, Flat, Greased Surface 0.24