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IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 20A, TC =100 C tSC 5 s, TJ(max) = 175 C E C E E G C G C G VCE(ON) typ. = 1.55V @ IC = 12A IRGP4620DPbF IRGP4620D-EPbF IRGB4620DPbF TO-247AC TO-247AD TO-220AB C C Applications Industrial Motor Drive Inverters E C E UPS C G G G Welding IRGS4620DPbF E IRGIB4620DPbF D2Pak TO-220AB Full-Pak n-channel G C E Gate Collector Emitter Features Benefits High efficiency in a wide range of applications and switching Low VCE(ON) and switching losses frequencies Improved reliability due to rugged hard switching Square RBSOA and maximum junction temperature 175 C performance and high power capability Positive VCE (ON) temperature coeffi

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 irgb4620dpbf irgib4620dpbf irgp4620dpbf irgs4620dpbf.pdf Проектирование, MOSFET, Мощность

 irgb4620dpbf irgib4620dpbf irgp4620dpbf irgs4620dpbf.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 irgb4620dpbf irgib4620dpbf irgp4620dpbf irgs4620dpbf.pdf База данных, Инновации, ИМС, Транзисторы