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IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 20A, TC =100C tSC 5s, TJ(max) = 175C E C E E G C G C G VCE(ON) typ. = 1.55V @ IC = 12A IRGP4620DPbF IRGP4620D-EPbF IRGB4620DPbF TO-247AC TO-247AD TO-220AB CC Applications Industrial Motor Drive Inverters E C E UPS C G GG Welding IRGS4620DPbF EIRGIB4620DPbF D2Pak TO-220AB Full-Pak n-channelG C EGate Collector EmitterFeatures Benefits High efficiency in a wide range of applications and switching Low VCE(ON) and switching losses frequencies Improved reliability due to rugged hard switching Square RBSOA and maximum junction temperature 175C performance and high power capability Positive VCE (ON) temperature coeffi