Скачать даташит для skb15n60hsg:

SKB15N60HS High Speed IGBT in NPT-technology C 30% lower Eoff compared to previous generation Short circuit withstand time 10 s G E Designed for operation above 30 kHz NPT-Technology for 600V applications offers PG-TO263-3-2 - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models http //www.infineon.com/igbt/ Type VCE IC Eoff Tj Marking Package K15N60HS SKB15N60HS 600V 15A 200 J 150 C PG-TO263-3-2 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current IC A 27 TC = 25 C 15 TC = 100 C Pulsed collector current, tp limit