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PD - 90330F REPETITIVE AVALANCHE AND dv/dt RATED IRF450 HEXFET TRANSISTORS JANTX2N6770 THRU-HOLE (TO-204AA/AE) JANTXV2N6770 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF450 500V 0.400 12A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves very low on-state resis- tance combined with high transconductance; superior re- TO-3 verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- lished advantages of MOSFETs such as voltage control, Features very fast switching, ease of paralleling and temperature Repetitive Avalanche Ratings stability of the electrical parameters. Dynamic dv/dt Rating They are well suited for applications such as

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 2n6770 irf450.pdf Проектирование, MOSFET, Мощность

 2n6770 irf450.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2n6770 irf450.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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