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PD - 90427C IRFF220 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6790 HEXFET TRANSISTORS JANTXV2N6790 THRU-HOLE (TO-205AF) REF MIL-PRF-19500/555 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFF220 200V 0.80 3.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves very low on-state resis- TO-39 tance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt- Features age control, very fast switching, ease of parelleling Repetitive Avalanche Ratings and temperature stability of the electrical parameters. Dynamic dv/dt Rating They are well suited for applications such as switch- Hermetically Sealed ing power

 

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 2n6790 irff220.pdf Проектирование, MOSFET, Мощность

 2n6790 irff220.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 2n6790 irff220.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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