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PD - 97460 AUTOMOTIVE GRADE AUIRF1404Z AUIRF1404ZS AUIRF1404ZL Features Advanced Process Technology HEXFET Power MOSFET Low On-Resistance D V(BR)DSS 40V 175 C Operating Temperature Fast Switching RDS(on) max. 3.7m Repetitive Avalanche Allowed up to Tjmax G ID (Silicon Limited) Lead-Free, RoHS Compliant 180A Automotive Qualified * S ID (Package Limited) 160A Description D D Specifically designed for Automotive applications, D this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low S S on-resistance per silicon area. Additional features D D S D G G of this design are a 175 C junction operating G temperature, fast switching speed and improved TO-220AB D2Pak TO-262 repetitive avalanche rating . These features com- AUIRF1404Z AUIRF1404ZS AUIRF1404ZL bine to make this design an extremely effici