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PD - 97460AUTOMOTIVE GRADEAUIRF1404ZAUIRF1404ZSAUIRF1404ZLFeatures Advanced Process TechnologyHEXFET Power MOSFET Low On-ResistanceDV(BR)DSS 40V 175C Operating Temperature Fast SwitchingRDS(on) max.3.7m Repetitive Avalanche Allowed up to TjmaxGID (Silicon Limited) Lead-Free, RoHS Compliant 180A Automotive Qualified *SID (Package Limited)160ADescriptionDDSpecifically designed for Automotive applications,Dthis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely lowS Son-resistance per silicon area. Additional featuresD DSDG Gof this design are a 175C junction operatingGtemperature, fast switching speed and improvedTO-220ABD2Pak TO-262repetitive avalanche rating . These features com-AUIRF1404ZAUIRF1404ZS AUIRF1404ZLbine to make this design an extremely effici