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PD - 97470 AUIRF3710Z AUTOMOTIVE GRADE AUIRF3710ZS Features HEXFET Power MOSFET Low On-Resistance 175 C Operating Temperature D VDSS = 100V Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m Lead-Free, RoHS Compliant G Automotive Qualified * ID = 59A Description S Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea- tures of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features com- bine to make this design an extremely efficient TO-220AB D2Pak and reliable device for use in Automotive applica- AUIRF3710Z AUIRF3710ZS tions and a wide variety of other applications. Absolute Maximum