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PD - 94969B IRF1405PbF Typical Applications HEXFET Power MOSFET l Industrial motor drive D VDSS = 55V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 5.3m l Dynamic dv/dt Rating G l 175 C Operating Temperature ID = 169A l Fast Switching S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description D This Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this S HEXFET power MOSFET are a 175 C junction operating D G temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this TO-220AB design an extremely efficient and reliable device for use in a wide variety of applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Contin