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PD - 95485A IRF1407PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.0078 Dynamic dv/dt Rating G 175 C Operating Temperature Fast Switching ID = 130A S Repetitive Avalanche Allowed up to Tjmax Description This Stripe Planar design of HEXFET Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. TO-220AB Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V